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| MITSUBISHI SEMICONDUCTOR . ation nge. pecific ct to cha bje final s not a its are su is is ic lim e: Th tr Notice parame Som P MIN RELI ARY M63834FP/KP 8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY PIN CONFIGURATION NC IN1 IN2 1 2 3 4 5 6 7 8 9 10 20 19 18 17 16 15 14 13 12 11 DESCRIPTION The M63834FP/KP 8-channel sinkdriver, consists of 8 PNP and 16 NPN transistors connected to from eight high current gain driver pairs. NC O1 O2 O3 O4 OUTPUT O5 O6 O7 O8 VCC NC : No connection FEATURES G High breakdown voltage (BVCEO 50V) G High-current driving (IC(max) = 500mA) G 3V micro computer compatible input G "L" active level input G With input diode G Wide operating temperature range (Ta = -40 to +85C) IN3 IN4 INPUT IN5 IN6 IN7 IN8 GND APPLICATION Output for 3 voltage microcomputer series and interface with high voltage system. Relay and small printer driver, LED, or incandescent display digit driver. 20P2N-A(FP) Package type 20P2E-A(KP) CIRCUIT DIAGRAM FUNCTION The M63834GP/KP is transistor-array of high active level eight units type which can do direct drive of 3 voltage microcomputer series. A resistor of 3.5k is connected between the input and the base of PNP transistors. The input diode is intended to prevent the flow of current from the input to the Vcc. Without this diode, the current flows from "H" input to the Vcc and the "L" input circuit is activated, in such a case where one of the inputs of the 8 circuit is "H" and the other are "L" to save power consumption. The diode is inserted to prevent such mis-operation. The outputs are capable of driving 500mA and are rated for operation with output voltage up to 50V. VCC 20K INPUT 3.5K 1.05K 7.2K 3K GND OUTPUT The eight circuits share the Vcc and GND The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit : ABSOLUTE MAXIMUM RATINGS Symbol VCC VCEO IC VI Pd Topr Tstg Parameter Supply voltage Collector-emitter voltage Collector current Input voltage Power dissipation Operating temperature Storage temperature (Unless otherwise noted, Ta = -40 ~ +85C) Conditions Output, H Current per circuit output, L Ta = 25C, when mounted on board Ratings 7 -0.5 ~ +50 500 -0.5 ~ VCC 1.10(FP)/0.68(KP) -40 ~ +85 -55 ~ +125 Unit V V mA V W C C Sep. 2001 MITSUBISHI SEMICONDUCTOR . ation nge. pecific ct to cha bje final s not a its are su is is ic lim e: Th tr Notice parame Som P MIN RELI ARY M63834FP/KP 8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY RECOMMENDED OPERATING CONDITIONS Symbol VCC Supply voltage (Unless otherwise noted, Ta = -40 ~ +85C) Parameter Limits min 2.7 0 typ 3.0 -- max 3.6 400 Unit V IC Collector current (Current per 1 circuit when 8 circuits are coming on simultaneously) Duty Cycle FP : no more than 4% KP : no more than 2% Duty Cycle FP : no more than 15% KP : no more than 6% mA 0 VCC-0.5 0 -- -- -- 200 VCC VCC-2.2 V V VIH VIL "H" input voltage "L" input voltage ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = -40 ~ +85C) Symbol V (BR) CEO VCE(sat) II ICC hFE Parameter Test conditions Limits min 50 -- -- -- -- 2000 typ -- 1.15 0.93 -220 2.6 10000 max -- 2.4 1.6 -600 4.0 -- Unit V V A mA -- Collector-emitter breakdown voltage ICEO = 100A VCC = 2.7V, VI = 0.5V, IC = 400mA Collector-emitter saturation voltage VCC = 2.7V, VI = 0.5V, IC = 200mA Input current VI = VCC-2.2V Supply current (AN only Input) VCC = 3.6V, VI = 0.5V DC amplification factor VCC = 2.7V, VCE = 2V, IC = 0.35A, Ta = 25C : Typical values are at Ta = 25C SWITCHING CHARACTERISTICS Symbol ton toff Parameter Turn-on time Turn-off time (Unless otherwise noted, Ta = 25C) Test conditions CL = 15pF (note 1) Limits min -- -- typ 120 4500 max -- -- Unit ns ns NOTE 1 TEST CIRCUIT INPUT VCC Measured device PG 50 VO TIMING DIAGRAM INPUT 50% 50% RL OUTPUT OUTPUT CL 50% 50% ton (1)Pulse generator (PG) characteristics : PRR=1kHz, tw = 10s, tr = 6ns, tf = 6ns, Zo = 50 VI = 0.5 ~ 2.7V (2)Input-output conditions : RL = 30, Vo = 10V, Vcc = 2.7V (3)Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes toff Sep. 2001 MITSUBISHI SEMICONDUCTOR . ation nge. pecific ct to cha bje final s not a its are su is is ic lim e: Th tr Notice parame Som P MIN RELI ARY M63834FP/KP 8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY TYPICAL CHARACTERISTICS Output Saturation Voltage Collector Current Characteristics 500 Vcc=2.7V VI=0.5V Thermal Derating Factor Characteristics 2.0 Power dissipation Pd(max) (W) 1.5 M63834FP Collector current Ic (mA) 400 1.10 300 1.0 M63834KP 0.68 200 Ta=25C Ta=85C Ta=-20C 0.5 0.572 0.354 100 0 0 25 50 75 85 100 0 0 0.5 1.0 1.5 2.0 Ambient temperature Ta (C) Output saturation voltage VCE(sat) (V) Duty Cycle-Collector Characteristics (M63834FP) 500 1 Duty Cycle-Collector Characteristics (M63834FP) 500 Collector current Ic (mA) Collector current Ic (mA) 400 400 300 2 3 4 5 6 7 8 300 1 200 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value the circle represents the value of the simultaneously-operated circuit. *Vcc = 3V *Ta = 25C 200 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value the circle represents the value of the simultaneously-operated circuit. *Vcc = 3V *Ta = 85C 2 3 4 5 67 8 100 100 0 0 20 40 60 80 100 0 0 20 40 60 80 100 Duty cycle (%) Duty cycle (%) 500 Duty Cycle-Collector Characteristics (M63834KP) 500 Duty Cycle-Collector Characteristics (M63834KP) *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value the circle represents the value of the simultaneously-operated circuit. *Vcc = 3V *Ta = 85C Collector current Ic (mA) 1 300 2 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value the circle represents the value of the simultaneously-operated circuit. *Vcc = 3V *Ta = 25C Collector current Ic (mA) 400 400 300 200 200 1 2 3 45 6 87 100 3 4 5 67 8 100 0 0 20 40 60 80 100 0 0 20 40 60 80 100 Duty cycle (%) Duty cycle (%) Sep. 2001 MITSUBISHI SEMICONDUCTOR . ation nge. pecific ct to cha bje final s not a its are su is is ic lim e: Th tr Notice parame Som P MIN RELI ARY M63834FP/KP 8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY DC Amplification Factor Collector Current Characteristics 105 500 7 VCE=2V 5 3 2 Output Current Characteristics VCE=2V DC amplification factor hFE Ta=85C Collector current IC (mA) 400 Ta=85C 104 7 5 3 2 300 Ta=25C Ta=-40C Ta=25C 200 103 7 5 3 2 Ta=-40C 100 102 1 10 2 3 5 7 102 2 3 5 7 103 0 0 0.4 0.8 1.2 1.6 2.0 Collector current IC (mA) Input voltage Vcc-VI (V) Input Characteristics -0.6 VCC=3V Driver Supply Characteristics 20.0 VI=0.5V -0.4 -0.3 Ta=85C Supply Current Icc (mA) -0.5 16.0 Input Current II (mA) 12.0 Ta=25C Ta=-40C 8.0 -0.2 Ta=25C -0.1 Ta=-40C 4.0 Ta=85C 0 0 1 2 3 0 0 2 4 6 8 10 Input voltage Vcc-VI (V) Supply voltage Vcc (V) Sep. 2001 |
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